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| Transistor 2SC3940, 2SC3940A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1534 and 2SA1534A 5.00.2 4.00.2 Unit: mm s Features q 0.70.2 q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. Parameter Collector to base voltage Collector to 2SC3940 2SC3940A 2SC3940 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 30 60 25 50 5 1.5 1 1 150 -55 ~ +150 Unit V 0.45 -0.1 +0.15 13.50.5 s Absolute Maximum Ratings (Ta=25C) 0.70.1 8.00.2 0.45 -0.1 +0.15 emitter voltage 2SC3940A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V A A W C C 123 2.540.15 2.30.2 V 1.27 1.27 1:Emitter 2:Collector 3:Base TO-92NL Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SC3940 2SC3940A 2SC3940 2SC3940A (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IB = 1A*2 IC = 500mA, IB = 50mA*2 IB = 500mA, Ia = 50mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 30 60 25 50 5 85 50 0.2 0.85 200 11 *2 min typ max 0.1 Unit A V V V 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *1h 0.4 1.2 V V MHz 20 pF Pulse measurement FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta 1.2 1.5 Ta=25C 2SC3940, 2SC3940A IC -- VCE 1.2 VCE=10V Ta=25C 1.0 IC -- I B Collector power dissipation PC (W) 1.0 1.25 Collector current IC (A) 0.8 1.0 8mA 7mA 6mA 5mA 4mA Collector current IC (A) IB=10mA 9mA 0.8 0.6 0.75 0.6 0.4 0.5 3mA 2mA 0.4 0.2 0.25 1mA 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 2 4 6 8 10 12 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 25C -25C VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 100 30 10 3 25C 1 75C 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C IC/IB=10 600 hFE -- IC VCE=10V Forward current transfer ratio hFE 500 400 300 Ta=75C 200 25C 100 -25C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT -- IE 200 Cob -- VCB 50 120 VCER -- RBE Collector to emitter voltage VCER (V) IE=0 f=1MHz Ta=25C IC=10mA Ta=25C 100 160 Collector output capacitance Cob (pF) VCB=10V Ta=25C Transition frequency fT (MHz) 40 80 120 30 60 2SC3940A 40 2SC3940 20 80 20 40 10 0 -1 0 -3 -10 -30 -100 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 Transistor ICEO -- Ta 104 VCE=10V 10 3 ICP 103 2SC3940, 2SC3940A Area of safe operation (ASO) Single pulse Ta=25C Collector current IC (A) 1 0.3 IC t=10ms t=1s ICEO (Ta) ICEO (Ta=25C) 102 0.1 0.03 0.01 0.003 10 1 0 20 40 60 80 100 120 140 160 0.001 0.1 0.3 1 3 10 30 2SC3940A 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) 2SC3940 3 |
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